RLA-3100-V Lamp Annealing System for Contact Annealing

Vacuum load-lock on the chamber and N2 load-lock on the transport unit improve throughput.
Supports various wafers including Si, GaN, and SiC.


  • Supports a wide range of wafer sizes up to 8 inches.
  • Includes an automated susceptor transfer function for SiC and GaN wafers.
  • Halogen lamps are installed in both an upper and lower cross.
  • 6 zone control allows easy control of the power ratio for each zone.
  • Non-contact measurement of workpiece temperature is performed using radiative thermometers, and feedback control is possible.


RLA-3100-V is a lamp annealing system that uses multiple halogen lamps arranged in an upper and lower cross as the heat source, and is intended for rapid, high-precision annealing of wafers. A vacuum-resistant quartz tube and N2 atmosphere transport platform enables processing in an ultra-low oxygen atmosphere.
RLA-3100-V also enables GaN substrate processing as well as SiC and Si.


Operating temperature range 400 to 1,200°C
Temperature rise rate Max. 200°C/sec
Lamp array Top/bottom surface cross-array
Supported wafer sizes Up to 8 inches
Gases used N2, Ar, O2, H2
Applications Contact annealing, oxidation (enables depressurized processing and processing in N2 load-lock environments)
Workpieces Si, SiC wafers, GaN, others

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