High-Temperature Clean Oven CLH Series

A heat-resistant, high-performance filter and our unique cooling unit enable high-temperature baking in a clean environment (max. 530°C (max. 500°C for the V model)).

The hot-air circulation system allows excellent temperature uniformity and class 100 air cleanliness (when the temperature is stable).

This type of oven is optimal for semiconductor wafer and glass substrate baking, as well as aging and other heat treatments that require high temperature and high accuracy.

Heat treatments at 20 ppm or lower residual O2 concentrations is available by introducing nitrogen (N2) gas into the chamber.

Features

  • A heat-resistant high-performance filter and our unique cooling unit are installed to enable high-temperature baking.
  • The chamber interior can maintain class 100 cleanliness when the temperature is stable.
  • There are two hot-air blower types: a front side blower with horizontal circulation (type V) and a side blower (type III). Both enable high thermal efficiency and good temperature uniformity.
  • Optimal for semiconductor wafer and glass substrate baking, aging and other heat treatments that require high accuracy.
  • Inert gases can be introduced into the chambers to use the ovens as inert gas ovens.

Specifications

Model CLH-21CD(Ⅲ) CLH-21CDH(Ⅲ) CLH-21CD(V) CLH-35CD(Ⅲ) CLH-35CDH(Ⅲ)
System Forced circulation (side flow) Front blower-type forced circulation Forced circulation (side flow)
Max. operating temperature (*1) 450°C 530°C 500°C 450°C 530°C
Normal operating temperature range (*1) RT + 70 to 450°C RT + 70 to 530°C RT + 70 to 500°C RT + 70 to 450°C RT + 70 to 530°C
Temperature profile accuracy (*2) ±5°C (at 450°C) ±8°C (at 530°C) ±5°C (at 500°C) ±5°C (at 450°C) ±8°C (at 530°C)
Time to reach max. temperature (*1) 80 minutes or less (RT + 70 to 450°C) 90 minutes or less (RT + 70 to 530°C) 80 minutes or less (RT + 70 to 500°C) 70 minutes or less (RT + 70 to 450°C) 120 minutes or less (RT + 70 to 530°C)
Cooling time (reference value) 90 minutes or less (450 to 100°C) 100 minutes or less (530 to 100°C) 90 minutes or less (500 to 100°C) 100 minutes or less (450 to 100°C) 120 minutes or less (530 to 100°C)
Cleanliness Class 100 (when temperature is stable)
Filter Heat-resistant, high-performance filter Heat-resistant, high-performance filter
Final oxygen concentration 20 ppm or less
Time to reach 20 ppm 45 minutes or less (N2 injection 250 L/min) 50 minutes or less (N2 injection 250 L/min)
Temperature control Programmer
Reading accuracy Less than 500°C: ±0.5°C
500°C or higher: ±(0.1% of displayed value)
Memory capacity Total 1024 segments (max. 99 patterns)
Control operation PID control with auto tuning
Heater output 33.6 kW (at 200 V) 21 kW (at 200 V) 48.3 kW (at 200 V)
Temperature recorder Single pen recorder (control point record, thermocouple K)
Thermocouple K
External dimensions (mm) 1285 (W) × 2020 (H) × 1605 (D) 1180 (W) × 2110 (H) × 1670 (D) 1285 (W) × 2080 (H) × 1775 (D)
Internal dimensions (mm) 670 (W) × 700 (H) × 500 (D) 700 (W) × 700 (H) × 500 (D)
(*3)
670 (W) × 790 (H) × 670 (D)
Shelf withstand load (uniformly distributed load) 15 kg/shelf
Equipment weight Approx. 1050 kg Approx. 1100 kg Approx. 1250 kg
Internal pressure gauge 0 to 2 kPa
Clean meter 0 to 1 kPa
Exhaust port size 1B, ball valve stopper
Breaker capacity AC 200 V, 150 A, 3-phase, 50/60 Hz AC 200 V, 100 A, 3-phase, 50/60 Hz AC 200 V, 175 A, 3-phase, 50/60 Hz
Safety equipment Leakage breaker, overheat prevention gauge, motor overload protector,
control-circuit circuit protector, low coolant flow rate detector
Accessories 2 shelves (shelf holder)
Applications Baking and curing for semiconductor wafers and glass substrates
(*1) Heater temperature rise capability, value at control points inside the heating chamber.
(*2) Effective dimensions are 2/3 of the internal dimensions.

(*3) Internal width is 700 mm, however the opening size is 630 mm.