High-Temperature Clean Oven
A heat-resistant, high-performance filter and our unique cooling unit enable high-temperature baking in a clean environment (max. 530°C (max. 500°C for the V model)).
Heat treatments at 20 ppm or lower residual O2 concentrations is available by introducing nitrogen (N2) gas into the chamber.
Features
- The chamber interior can maintain class 100 cleanliness when the temperature is stable.
- There are two hot-air blower types: a front side blower with horizontal circulation (type V) and a side blower (type III). Both enable high thermal efficiency and good temperature uniformity.
- Optimal for semiconductor wafer and glass substrate baking, aging and other heat treatments that require high accuracy.
- Inert gases can be introduced into the chambers to use the ovens as inert gas ovens.
Specifications
| Model | CLH-21CD(Ⅲ) | CLH-21CDH(Ⅲ) | CLH-21CD(V) | CLH-35CD(Ⅲ) | CLH-35CDH(Ⅲ) |
|---|---|---|---|---|---|
| System | Forced circulation (side flow) | Front blower-type forced circulation | Forced circulation (side flow) | ||
| Operation temperature (*1) | RT + 70 to 450°C | RT + 70 to 530°C | RT + 70 to 500°C | RT + 70 to 450°C | RT + 70 to 530°C |
| Temperature profile accuracy (*2) | ±5°C (at 450°C) | ±8°C (at 530°C) | ±5°C (at 500°C) | ±5°C (at 450°C) | ±8°C (at 530°C) |
| Time to reach max. temperature (*1) | 80 minutes or less RT + 70 to 445°C (450-5°C) |
90 minutes or less RT + 70 to 522°C (530-8°C) |
80 minutes or less RT + 70 to 495°C (500-5°C) |
70 minutes or less RT + 70 to 445°C (450-5°C) |
100 minutes or less RT + 70 to 522°C (530-8°C) |
| Cooling time (reference value) | 90 minutes or less (450 to 100°C) | 100 minutes or less (530 to 100°C) | 90 minutes or less (500 to 100°C) | 100 minutes or less (450 to 100°C) | 120 minutes or less (530 to 100°C) |
| Cleanliness | Class 100 (when temperature is stable) | ||||
| Filter | Heat-resistant, high-performance filter | ||||
| Guaranteed O2 density | 20 ppm or less | ||||
| Time to reach 20 ppm | 45 minutes or less (N2 injection 250 L/min) | 50 minutes or less (N2 injection 250 L/min) | |||
| Temperature control | Programmer | ||||
| Reading accuracy | Less than 500°C: ±0.5°C 500°C or higher: ±(0.1% of displayed value) |
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| Memory capacity | Total 1024 segments (max. 99 patterns) | ||||
| Control operation | PID control with auto tuning | ||||
| Heater output | 33.6 kW (at 200 V) | 21 kW (at 200 V) | 48.3 kW (at 200 V) | ||
| Temperature recorder | Single pen recorder (control point record, thermocouple K) | ||||
| Thermocouple | K | ||||
| External dimensions | W1285 × H2020 × D1605 mm | W1180 × H2110 × D1670 mm | W1285 × H2090 × D1775 mm | ||
| Inner dimensions | W670 × H700 × D500 mm | W700 × H700 × D500 mm (*3) | W670 × H790 × D670 mm | ||
| Shelf withstand load (uniformly distributed load) | 15 kg/shelf | ||||
| Equipment weight | Approx. 1050 kg | Approx. 1100 kg | Approx. 1250 kg | ||
| Internal pressure gauge | 0 to 2 kPa | ||||
| Clean meter | 0 to 1 kPa | ||||
| Exhaust port size | 1B, ball valve stopper | ||||
| Breaker capacity | AC 200 V, 125 A, 3-phase, 50/60 Hz | AC 200 V, 100 A, 3-phase, 50/60 Hz | AC 200 V, 175 A, 3-phase, 50/60 Hz | ||
| Safety equipment | Leakage breaker, overheat prevention gauge, motor overload protector, control-circuit circuit protector, low coolant flow rate detector |
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| Accessories | 2 shelves (shelf holder) | ||||
| Applications | Baking and curing for semiconductor wafers and glass substrates | ||||
(*1) Heater temperature rise capability, value at control points inside the heating chamber.
(*2) Effective dimensions are 2/3 of the inner dimensions.
(*3) Inner width is 700 mm, however the opening size is 630 mm.
